unisonic technologies co., ltd 2sc3356 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r206-024,e high frequency low noise amplifier ? description the utc 2sc3356 is designed for such applications as: dc/dc converters, supply line switching, battery charger, lcd backlighting, peripheral drivers, driver in lo w supply voltage applications (e.g. lamps and leds) and inductive load driver (e.g. relays, buzzers and motors). ? features * low noise and high gain * high power gain ? ordering information ordering number pin description lead free package 1 2 3 packing 2sc3356l-x-ae3-r sot-23 e b c tape reel ? marking
2sc3356 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-024,e ? absolute maximum rating parameter symbol ratings unit collector to base voltage bv cbo 20 v collector to emitter voltage bv ceo 12 v emitter to base voltage bv ebo 3 v collector current i c 100 ma power dissipation p d 200 mw junction temperature t j 150 storage temperature t stg -65~ +150 notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base cut-off current i cbo v cb =10v,i e =0 1.0 a emitter-base cut-off current i ebo v eb =1 v, i c =0 1.0 a dc current gain h fe v ce =10 v, i c =20 ma 50 300 gain bandwidth product f t v ce =10 v, i c =20 ma 7 ghz feed-back capacitance c re v cb =10 v, i e =0, f =1.0mhz 1.0 pf noise figure nf v ce =10 v, i c =7ma, f =1.0ghz 2.0 db ? classification of h fe rank a b c range 50-160 160-240 240-300
2sc3356 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-024,e ? typical characteristics total power dissipation, p t (mw) feed-back capacitance, c re (pf) v ce =10v 100 200 50 20 10 0.5 1 5 10 50 collector current, i c (ma) dc current gain vs. collector current v ce =10v f=1.0ghz 15 10 5 0 0.5 1 5 10 50 collector current, i c (ma) 70 insertion gain vs. collector current gain bandwidth product, f t (mhz) insertion gain,|s 21 | 2 (db) maximum gain, g max (db)
2sc3356 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-024,e ? typical characteristics(cont.) v ce =10v f=1.0ghz 7 6 5 4 3 2 1 0 0.5 1 5 10 50 70 collector current, i c (ma) noise figure, nf (db) noise figure vs. collector current collector to emitter voltage, v ce (v) noise figue, nf (db) noise figure, forward insertion gain vs. collector to emitter voltage f=1.0ghz i c =20ma nf |s 21 | 2 5 4 3 2 1 0 0246810 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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